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Part Name(s) : R0605300L
RF Micro Devices
Description : 30dB Reverse Hybrid 5MHz to 65MHz (Low Current)
Part Name(s) : RF3322 RF3322PCBA
RF Micro Devices
Description : CABLE Reverse PATH PROGRAMMABLE GAIN AMPLIFIER
Part Name(s) : RF3320 RF3320PCBA
RF Micro Devices
Description : CABLE Reverse PATH PROGRAMMABLE GAIN AMPLIFIER
Part Name(s) : RF3321 RF3321PCBA
RF Micro Devices
Description : Reverse PATH HIGH OUTPUT POWER PROGRAMMABLE GAIN AMPLIFIER
Part Name(s) : R0605300L
PREMIER DEVICES, INC.
Description : Si Reverse, Low Current, 5 – 65MHz, 30.5dB typ. Gain @ 65MHz, 135mA max. @ 24VDC
Part Name(s) : R0605300L1
PREMIER DEVICES, INC.
Description : Si Reverse, Low Current, 5 – 65MHz, 30.5dB typ. Gain @ 65MHz, 135mA max. @ 24VDC
Part Name(s) : R0605300L
Unspecified
Description : Si Reverse, Low Current, 5 – 65MHz, 30.5dB typ. Gain @ 65MHz, 135mA max. @ 24VDC
Part Name(s) : R0605400L
PREMIER DEVICES, INC.
Description : Si Reverse, Low Current, 5 – 65MHz, 40.3dB typ. Gain @ 65MHz, 160mA max. @ 24VDC
Part Name(s) : BAV19W BAV20W BAV21W
Shanghai Leiditech Electronic Technology Co., Ltd
Description : Low Reverse Current
Part Name(s) : MAX3514EEP MAX3514EEP+ MAX3516EUP MAX3516EUP+ MAX3517EEP MAX3517EEP+ MAX3514 MAX3516 MAX3517
Maxim Integrated
Description : Upstream CATV Amplifiers
Part Name(s) : ISG56531
Sirenza Microdevices => RFMD
Description : 5 TO 65MHz SILICON CATV 31 dB Hybrid AMPLIFIER
Part Name(s) : KSE200 KSE200STSTU
Fairchild Semiconductor
Description : NPN Epitaxial Silicon Transistor
Part Name(s) : R0605250L2
PREMIER DEVICES, INC.
Description : Si Reverse, Low Current, 5 – 65 MHz, 25.0dB typ. Gain @ 65MHz, 140mA max. @ 24VDC
Part Name(s) : MJE200 MJE200STU
Fairchild Semiconductor
Description : NPN Epitaxial Silicon Transistor
Part Name(s) : MAX3514EEP MAX3516EUP MAX3517EEP MAX3514 MAX3516 MAX3517
Maxim Integrated
Description : Upstream CATV Amplifiers (Rev - 2001)
Part Name(s) : MJE210 MJE340 MJE350
Samsung
Description : PNP EPITAXIAL SILICON TRANSISTOR
Part Name(s) : R0605250L1
PREMIER DEVICES, INC.
Description : Si Reverse, Low Current, 5 – 65 MHz, 25.2dB typ. Gain @ 65MHz, 135mA max. @ 24VDC